Protective capping of topological surface states of intrinsically insulating Bi2Te3
We have identified epitaxially grown elemental Te as a capping material that is suited Madeleine Pans/Molds to protect the topological surface states of intrinsically insulating Bi2Te3.By using angle-resolved photoemission, we were able to show that the Te overlayer leaves the dispersive bands of the surface states intact and that it does not alter